1. Selective conference presentation (First author only)
1.
S. Choudhary, and S.
Gangopadhyay, Zinc
Oxide Nano-structures: From Nano-Wall to Nano-Rod Growth Morphology, Emerging
Technologies: Micro to Nano (ETMN-2017), Solapur
University, Maharastra, India (2017)
S.
Choudhary, A. Hazra, A Agarwal, and S.
Gangopadhyay, ZnO Nano-structutres
for Gas Sensor Application: From Nano-Walls to Nano-Rods Growth Morphology, in
Internal workshop on Advanced Materials (IWAM 2017), NIST, Orissa, India
(2017).
S. Choudhary, and S. Gangopadhyay, Thin
Cu Film Resistivity using Four Probe Techniques: Effect of Film Thickness and
Geometrical Shapes, 2 nd International Conference on Condensed Matter and Applied Physics (ICC 2017) Bikaner, India (2017).
S. Gangopadhyay, Th. Schmidt, and J. Falta, Growth of Ge nano-islands on Ga-terminated Si(112) surface studied by STM presented in 3rd International Conference on Physics at Surfaces and Interfaces (PSI2014), Puri Orissa (2014).
S. Gangopadhyay, J. Rivett, A. Gibson, A. G. Slater, B. Mangham, N. Champness, P. H. Beton, and P. Moriarty, Conformational and orientational Ordering in 2D superlattices of brominated porphyrins, in Interdisciplinary Surface Science Conference (ISSC-19)" East Midlands Conference Centre, Nottingham, U.K. (2013).
2. S. Gangopadhyay and M. Yoshimura, Evolution of Ge quantum dots on clean and H nanopatterned Si(110) surface during annealing: a STM investigation in 100th Indian Science Congress (ISC), Calcutta University, Kolkata, India (2013).
3. S. Gangopadhyay, R. Danza, A. Sweetman, S. Jarvis and P Moriarty, Scanning tunnelling microscopy/spectroscopy of Si(100) at high currents: tunnelling and beyond, in UK SPM 2010, London Excel, UK (2010).
4. S. Gangopadhyay, R. Woolley, R. Danza, M. Phillips, K. Schulte, V. Dhanak, and P. Moriarty, C60 submonolayers on Si(111)-(7×7): Mixed chemisorption and physisorption states? in 17th Interdisciplinary Surface Science Conference (ISSC-17), Reading, UK (2009).
5. S. Gangopadhyay, R. Danza, and P. Moriarty, Adsorption of C60 molecules on Si(111)-(7×7): Structure and Bonding, in Self-assembly and Self-organization at Surfaces and Interfaces, University of Cambridge, UK (2008).
6. S. Gangopadhyay, M. Yoshimura and K. Ueda, Hetero-epitaxy of Ge on Si(110) studied by STM, in 14th International Colloquium on Scanning Probe Microscopy (ICSPM14), Atagawa Heights, Japan (2006).
7. S. Gangopadhyay, Th. Schmidt, T. Clausen, J. I. Flege, J. Falta, A. Locatelli and S. Heun, Ga induced nano-patterning of Si(111) for selective growth of Ge nano-islands, in Spring Meeting of the European Material Research Society, Nice, France (2006).
8. S. Gangopadhyay, Th. Schmidt, T. Yamaguchi, S. Einfeldt, K. Sebald, J. Gutowski, D. Hommel, and J. Falta, MOVPE grown self-organized InGaN nano-islands on GaN(0001)/sapphire templates, in Spring Meeting of the European Material Research Society, Nice, France (2006).
9. S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta, MOVPE grown InGaN nano-islands studied by STM, in Fall Meeting of the Material Research Society, Boston, USA (2005).
10. S. Gangopadhyay, Th. Schmidt, and J. Falta, Growth, structure and morphology of ultra-thin silicon nitride films on Si(111), in 4th International Symposium on Surface Science and Nanotechnology (ISSS-4), Saitama, Japan, (2005).
11. S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta, GaN(0001) surface structures and growth of InGaN quantum dots studied by STM, in 4th International Symposium on Surface Science and Nanotechnology (ISSS-4), Saitama, Japan, (2005).
12. S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta, Self-organized growth of InGaN nano-islands studied by STM, in 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany (2005).
13. S. Gangopadhyay, Th. Schmidt, and J. Falta, N-plasma assisted MBE grown GaN films on Si(111), in 6th International Conference on Nitride Semiconductors (ICNS-6), Bremen, Germany (2005).
14. S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta, Structure and morphology of InGaN nano-islands on GaN studied by STM, in Spring Meeting of the German Physical Society, Berlin, Germany (2005).
15. S. Gangopadhyay, Th. Schmidt, and J. Falta, Annealing induced 2D nano-patterning of Ga/Si(111) studied by STM, in Spring Meeting of the German Physical Society, Berlin, Germany (2005).
16. S. Gangopadhyay, Th. Schmidt, T. Clausen, J. Falta, A. Barinov, L. Gregoratti, and M. Kiskinova, Structure and morphology of GaN films on Si(111) grown by N-plasma assisted MBE, in 18th Workshop of Deutsche Gesellschaft für Kristallwachstum und Kristallzüchtung eV. (DGKK) on Epitaxy of III/V-Semiconductors, Bremen, Germany (2003).
17. S. Gangopadhyay, Th. Schmidt, and J. Falta, Elevated temperature STM study of Ga/Si(111) surface, in Winter-school about scanning probe microscopy and spectroscopy, Delmenhorst, Germany (2003).
18. S. Gangopadhyay, Th. Schmidt, and J. Falta, Temperature induced changes of Ga/Si(111) surface reconstruction studied by STM, in Spring Meeting of the German Physical Society, Dresden, Germany (2003).
19. S. Gangopadhyay, and B. K. Mathur, Scanning tunneling microscopy based nano-lithography, Proceedings of ‘PHOTONICS 2000: in International Conference on Fiber Optics and Photonics’, Calcutta (2000).
20. S. Gangopadhyay, S Kasiviswanathan and B. K. Mathur, Characterization of Gold/n-silicon interface using Ballistic Electron Emission Microscope, in 10th International workshop on physics of semiconductor device (IWPSD), New Delhi, India (1999). Proceedings of ‘10th international workshop on physics of semiconductor device’ (IWPSD), Vol-I, p-367 (1999).
21. S. Gangopadhyay, S. Kasiviswanathnan, V. Srinivas, T. B. Ghosh and B. K. Mathur, Self-affine fractal scaling of ion-eroded film surfaces, in The National Conference of Solid State Physics, Pondi Chheri, India, (1998).