| Project ID |
BITS-SRIP/57B5D5/2026 |
| Project Title |
Crystalline Ga2O3 Epitaxial Sheet for Flexible Electronics Via Liquid Metal Printing |
| Project Description |
Ultra-wide bandgap semiconductors such as gallium oxide (Ga2O3) can provide energy-efficient high-power electronics and deep-UV optoelectronics (mainly photodetection). Due to their intrinsic material properties, Ga2O3 can operate at higher temperatures, handle higher powers at reduced size, weight, and at the same time be more efficient than existing technologies. Like all other wide bandgap semiconductors, p-type doping is difficult for Ga2O3. Moreover, it needs a high growth temperature and high vacuum deposition tools to grow Ga2O3. Developing a low-temperature, cost-effective manufacturing process, and viability of p-type doping can pave the way for commercialization of Ga2O3-based technology. Liquid metal printing (LMP)-based method, which utilizes the properties of High entropy liquid metal (HELM), has shown promise as a cost effective, low temperature, scalable, and vacuum free deposition method. Proper alloy composition and process parameter selection can lead to p-Ga2O3.
Despite having all the good material properties for power applications, Ga2O3 has very poor thermal conductivity (0.1-0.3 W/cm K at RT). Under high power operation, a huge amount of heat is generated. If heat is not efficiently dissipated, this will raise the device temperature and degrade the efficiency of power devices. Poor heat dissipation capacity of Ga2O3 has made scientific community low-spirited towards this material system for power applications. However, Ga2O3 thin sheet, due to its large surface/volume ratio, for flexible electronic applications can utilize its good material properties at the same time avoid the poor heat dissipation capacity of bulk Ga2O3. In this project, we will try to achieve the following objectives:
? Doped and undoped crystalline Ga2O3 sheet via liquid metal printing.
? Stacking of layers for homojunction/heterojunction ((e.g., p-Ga2O3/n-Ga2O3, Ga2O3/Al2O3, Ga2O3/In2O3) based on Ga2O3.
? Evaluate the scalability and sustainability of the process for industrial applications.
? Use of grown materials for flexible electronics.
This project introduces a non-vacuum, low-temperature, and potentially roll-to-roll compatible method for growing flexible crystalline Ga2O3 films, thereby a) eliminating the need for rigid substrates or high-vacuum equipment, b) enabling direct synthesis of crystalline epitaxial nanosheets, c) Bridging the gap between power electronics and flexible/wearable electronics. In a broader sense, this project might democratize the epitaxial growth process which has been viewed as a costly and equipment intensive process. If successful, it will enable next generation flexible devices such as wearable UV sensors, bendable power converters, and foldable high-frequency RF components. By combining the strategic benefits of crystallinity, flexibility, and possible scalability, this project can significantly advance the frontier of next-generation semiconductor technologies. |
| Project Discipline |
EEE, ECE, EIE, Material Science, Chemistry, Physics |
| Faculty Name |
RAHUL KUMAR |
| Department |
Department of Electrical & Electronics Engineering |
